Congratulations to the inventors on the granting of U.S. Patent No. US 12,670,378 B2 by the United States Patent and Trademark Office (USPTO) for the invention:
"Memristor Structures with Analog Switching Characteristics and Method for Fabricating the Same."
Inventors
- Assoc. Prof. Ngoc Kim Pham, Ph.D. – VNUHCM-University of Science
- Quan Phu Pham, M.Sc. – VNUHCM-University of Science
- Prof. Bach Thang Phan, Ph.D. – VNUHCM-University of Health Sciences
- Assoc. Prof. Thuat Tran Nguyen, Ph.D. – Semiconductor and Advanced Materials Institute, Vietnam National University, Hanoi
💡 A Materials Platform for the Next Generation of Memristors
Over the past decade, memristor research has been largely centered on conventional metal-oxide systems such as TiO₂, HfOₓ, and TaOₓ. This patent introduces a new direction by establishing and protecting a materials platform based on chromium oxide (CrOₓ) for memristor technology.
Rather than proposing a single device structure, the invention positions CrOₓ as a core functional material that can be flexibly integrated with various oxide layers and metal electrodes to engineer new generations of memristors. This platform enables devices with multilevel memory states and nonlinear electrical characteristics—key properties required for implementing artificial synapses in next-generation computing hardware.
🧠 A Building Block for a New Computing Architecture
The significance of this patent extends beyond the memristor device itself. It also presents a strategy for integrating the proposed materials platform into synapse arrays, forming the foundation of neuromorphic computing hardware.
The patent describes a crossbar array architecture with integrated passive selector (diode) functionality, where each cross-point acts as an electronic synapse capable of simultaneous information storage and computation. Such an architecture paves the way for In-Memory Computing and Neuromorphic Computing chips, enabling millions of memristors to operate in parallel while significantly reducing data movement between memory and processors—one of the fundamental bottlenecks of conventional computing architectures.
🚀 Laying the Foundation for Future AI Chips
The journey from a new materials concept developed in the laboratory to an internationally granted patent marks the beginning of a broader vision: developing integrated AI hardware based on memristor technology.
Originating from the Faculty of Materials Science and Technology, VNUHCM-University of Science, this achievement establishes a strong foundation for collaborative research between Vietnam National University Ho Chi Minh City (VNUHCM) and Vietnam National University Hanoi (VNU) in advanced materials, semiconductor devices, and next-generation AI chips.
🤝 Acknowledgements
This patent is not only the result of scientific dedication but also a testament to the impact of research funding programs in Vietnam.
The authors sincerely acknowledge the VinIF Foundation (Vingroup Innovation Foundation) for its generous support in fostering research collaboration and connecting scientists across institutions. VinIF's support has helped transform laboratory ideas into internationally protected intellectual property, bringing Vietnam one step closer to developing globally competitive semiconductor and AI hardware technologies.
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