Self-rectifying resistive switching in MAPbI3-based memristor device

Congratulations to our colleague MS Student. Pham Phu Quan, for his recent publication entitled in the journal " Applied Physics Letters", which was a collaboration with our colleagues in the lab of Prof. Yoshiyuki Kawazoe at Tohoku University, Japan.

Simple MIM structures enable memristor integration into a passive crossbar array level. This structure allows for a compact two-terminal storage cell to be located at each crossing point of multiple perpendicular conducting lines, resulting in an extremely high storage density with a reduced cell area of 4F². However, the array cell level faces a sneak-path issue, also known as crosstalk, where undesirable leakage current from unselected neighbouring cells causes misreading of the selected HRS cell when the neighbouring cells are in an LRS. As the memory density increases, the number of sneak pathways grows exponentially, making it challenging to perform cross-point read operations without selection devices. This phenomenon leads to high power consumption and limitations in the array size for commercial applications, making it a fatal flaw of the high-density structure.

In the development of memristor devices based on MAPbI₃ thin films, in conjunction with eliminating crosstalk issues in crossbar integration, we investigate the self-rectifying behaviour and retention performance of a MAPbI₃ film using a tungsten (W) metal as a top electrode. It is found that the width of the depletion region of the W/MAPbI3 interface can be extended when the device is reverse-biased. The W electrode gives a distinct self-rectifying RS behaviour, differentially compared to our previous study using silver and chromium as TE, which emphasizes the significance of the nature of electrode materials. Additionally, we thoroughly discuss the switching uniformity underlying the self-rectifying behaviour and the characteristics of the W/MAPbI₃ interface. Density functional theory (DFT) calculations are employed to gain deeper insight into these phenomena, providing valuable theoretical support for our experimental observations.

 

For more details, please visit: 

https://doi.org/10.1063/5.0178032

See the supplementary material for SEM, AFM, Hall, current-voltage measurements, DFT calculation parameters, atomic structure, and band structure of W/MAPbI3 interfaces.

 

Funding

This research was supported by the Vietnam National University, Ho Chi Minh City, under grant number B2022-18-03. 

The authors express their sincere thanks to the crew of CCMS of the Institute for Materials Research, Tohoku University, for their continuous support and help in using the MASAMUNE-IMR, CRAY-XC50 supercomputing facilities.