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Nano-ZnO-Decorated lotus fibres for nonvolatile memristors

  


Congratulations to our colleague MS Student. Nguyen Hong Ngoc, for her recent publication entitled "Nano-ZnO-Decorated lotus fibres for nonvolatile memristors" in the journal " Applied Surface Science", which was a collaboration with our colleagues in the lab of Prof. Sungkyun Park at the Pusan National University, Korea.


This study has developed an electronic device using green materials derived from the cellulose fibres of lotus petioles, combined with ZnO nanoparticles to form a ZnO-cellulose (ZC) nanocomposite. The ZC material is used as the switching layer in the structure of a resistive random access memory (RRAM), demonstrating non-volatile bipolar switching behaviour. The device based on the ZC thin film exhibits improvements such as a low operating voltage of 2.0 V, a high ON/OFF ratio of 10³, durability over 10² cycles, and data retention up to 10⁴ seconds. Photoluminescence (PL) and X-ray Photoelectron Spectroscopy (XPS) results confirm the presence of oxygen vacancies in the ZnO nanoparticles, influencing the non-volatile properties of the Ag/ZC/FTO device. This indicates that the ZC material from lotus petioles is promising for environmentally friendly and low-cost storage devices.


For more details, please visit: 

https://doi.org/10.1016/j.apsusc.2024.160366


Funding 

The financial support from the Vietnam National Foundation for Science and Technology Development (NAFOSTED) under grant number 103.02-2021.86 is greatly appreciated.


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